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作者： Eunsil Leea, Jong-Young Kima, Yong-Il Parkb, Sung Jin Anb

a Icheon Branch, Korea Institute of Ceramic Engineering and Technology, 3321 Gyeongchung Daero, Sindun-myeon, Icheon-si, Gyeonggi-do 467-843, Republic of Korea

b Department of Materials Science and Engineering, Kumoh Institute of Technology, Gumi, Republic of Korea

 

摘要：We report observation of both free and defect-mediated excitonic emissions from temperature-dependent PL study on ZnO/graphene oxide (G-O) nanocomposite grown by ultrasonic assisted spray pyrolysis (UASP). From the temperature-dependent photoluminescence (PL) spectra of the ZnO/G-O nanocomposite, new graphene-related peak was observed at 372 nm along with the exciton transition bound to neutral acceptors or deep donors. The PL intensity of new graphene-related peaks (3.33 eV) become more prominent with increasing G-O concentration, and it was saturated or decreased with the addition of >7.0 wt% of G-O. This feature indicates that new graphene-related states were created below conduction band of ZnO, which supports the excitonic PL enhancement by graphene-embedding is contributed not by charge transfer, but by vacancy filling effect of G-O.

 

關鍵詞：Graphene; ZnO; Vapour synthesis; Photoluminescence