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詳細摘要： Zirconium disulfide （ZrS?） is an indirect gap layered semiconductor in the bulk ...

詳細摘要： Zirconium disulfide （ZrS?） is an indirect gap layered semiconductor in the bulk ...

詳細摘要： More than a decade of growth optimization in chemical vapor transport （CVT） as w...

詳細摘要： 100% environmentally stable metallic NbS2 （niobium disulfide） crystals: NbS2 dis...

詳細摘要： Anisotropic transition metal trichalcogenide material TiS3 is available at 2Dsem...

詳細摘要： ZrSiS as a theoretically predicted and experimentally proven Dirac semimetal, ex...

詳細摘要： Gamma layered phase of In2S3 is a direct gap semiconductor with an optical band ...

詳細摘要： NiPSe3 is a quasi-two-dimensional antiferromagnet in the bulk form while it's ma...

詳細摘要： 14 years of growth optimization in chemical vapor transport （CVT） as well as flu...

詳細摘要： Natural MoS2 is an indirect gap semiconductor （1.2 eV） but becomes highly lumine...

詳細摘要： Our TiS2 crystals are stabilized in 1T ohase （semimetallic phase）.

詳細摘要： 14 years of growth optimization in chemical vapor transport （CVT） as well as flu...

詳細摘要： Hafnium disulfide （HfS?） is an indirect gap layered semiconductor in the bulk an...

詳細摘要： Large size hexagonal phase GaTe （Gallium telluride） crystals have been developed...

詳細摘要： More than a decade of growth optimization in chemical vapor transport （CVT） as w...

詳細摘要： Our single crystal GeS （Germanium sulfide） crystals come with guaranteed optical...

詳細摘要： The only commercially available TlGaS2 vdW crystals have been synthesized at our...

詳細摘要： The only commercially available TlInS2 vdW crystals have been synthesized at our...

詳細摘要： Tin sulfooxide is a ternary alloy belonging to M2X3 family of materials.

詳細摘要： Magnetic semiconductor MnPS3 has a monoclinic structure with the factor group C2...