Semiconductor base material trace impurity elements in high purity indium carbon is one of the factors affecting the quality of semiconductor devices. Therefore, the determination of trace carbon in high purity indium has become a production on the analysis of the subject need to be solved.

xiang ying analysis technology co., LTD adopts GC7990 gas chromatography is flow in pure oxygen combustion metal indium sample, make into carbon dioxide, the carbon in the sample and then by oxygen flow into the low temperature cold trap, carbon dioxide was set up. After heating stripping, desorption, pure hydrogen as carrier gas, flows through the column, in the role of nickel convert agent, in the 420 ℃ when carbon dioxide is converted into methane, as well as the possible existence of carbon monoxide with hydrogen flow through thermal conductivity cell detector, gas chromatography determination, calculated according to the chromatographic peak area of carbon content in the sample. Sample quantity is 1 g, method detection limit of about 2 x 10 ~ 4%.

               半導體基礎材料高純銦中微量雜質元素碳的存在是影響半導體器件質量的因素之一。因此,高純銦中微量碳的測定已成為生產(chǎn)上需要解決的分析課題。

              滕州市翔鷹分析技術有限公司采用GC7990氣相色譜法是在純氧氣流中燃燒金屬銦試樣,使試樣中的碳轉化為二氧化碳,然后被氧氣流載入低溫冷阱,二氧化碳被捕集起來。再經(jīng)過升溫脫附、解吸,以純氫氣為載氣,流經(jīng)轉化柱,在鎳轉化劑作用下,于420℃時二氧化碳以及可能存在的一氧化碳轉化為甲烷,隨氫氣流一起經(jīng)過熱導池檢測器,進行氣相色譜測定,根據(jù)色譜峰面積計算出試樣中碳的含量。取樣量為1克時,方法的檢出限約2×10~4%。