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供貨周期	現(xiàn)貨	應(yīng)用領(lǐng)域	環(huán)保,化工,能源,綜合

This product contains full area coverage WSe2 monolayers on c-cut sapphire substrates. Sample size measures 1cm in size and the entire sample surface contains monolayer thick WSe2 sheet. Synthesized full area coverage monolayer WSe2 is highly luminescent and Raman spectroscopy studies also confirm the monolayer thickness (please see the technical specifications)

Sample Properties.

Sample size	1cm x 1cm square shaped
Substrate type	Sapphire c-cut (0001)
Coverage	Full monolayer coverage
Electrical properties	1.62 eV Direct Bandgap Semiconductor
Crystal structure	Hexagonal Phase
Unit cell parameters	a = b = 0.327 nm, c = 1.295 nm, α = β = 90°, γ = 120°
Production method	Low pressure Chemical Vapor Deposition (LPCVD)
Characterization methods	Raman, photoluminescence, TEM, EDS

Specifications

1) Identification. Full coverage 100% monolayer WSe2 uniformly covered across c-cut sapphire

2) Physical dimensions. One centimeter in size. Larger sizes up to 2-inch wafer-scale available upon requests.

3) Smoothness. Atomically smooth surface with roughness < 0.15 nm.

4) Uniformity. Highly uniform surface morphology. WSe2 monolayers uniformly cover across the sample.

5) Purity. 99.9995% purity as determined by nano-SIMS measurements

6) Reliability. Repeatable Raman and photoluminescence response

7) Crystallinity. High crystalline quality, Raman response, and photoluminescence emission comparable to single crystalline monolayer flakes.

8) Substrate. c-cut Sapphire but our research and development team can transfer WSe2 monolayers onto variety of substrates including PET, quartz, and SiO2/Si without significant compromisation of material quality.

9) Defect profile. WSe2 monolayers do not contain intentional dopants or defects. However, our technical staff can produce defected WSe2 using α-bombardment technique.

Supporting datasets [Full area coverage monolayer WSe2 on c-cut Sapphire]

Transmission electron images (TEM) acquired from CVD grown full area coverage WSe2 monolayers on c-cut sapphire confirming highly crystalline nature of monolayers

Room temperature photoluminescence spectroscopy (PL) and Raman spectroscopy (Raman) measurements performed on CVD grown full area coverage monolayer WSe2 on c-cut sapphire. Raman spectroscopy measurement confirm monolayer nature of the CVD grown samples and PL spectrum display sharp and bright PL peak located at 1.67 eV in agreement with the literature.